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BCM856BS; BCM856BS/DG BCM856DS; BCM856DS/DG
PNP/PNP matched double transistors
Rev. 01 -- 7 August 2008 Product data sheet
1. Product profile
1.1 General description
PNP/PNP matched double transistors in small Surface-Mounted Device (SMD) plastic packages. The transistors are fully isolated internally.
Table 1. Product overview Package NXP BCM856BS BCM856BS/DG BCM856DS BCM856DS/DG SOT457 SC-74 small SOT363 JEITA SC-88 very small Package configuration
Type number
1.2 Features
I I I I Current gain matching Base-emitter voltage matching Drop-in replacement for standard double transistors AEC-Q101 qualified
1.3 Applications
I Current mirror I Differential amplifier
1.4 Quick reference data
Table 2. Symbol VCEO IC hFE Quick reference data Parameter collector-emitter voltage collector current DC current gain VCE = -5 V; IC = -2 mA Conditions open base Min 200 Typ 290 Max -65 -100 450 Unit V mA
Per transistor
NXP Semiconductors
BCM856BS; BCM856DS
PNP/PNP matched double transistors
Quick reference data ...continued Parameter hFE matching VBE matching Conditions VCE = -5 V; IC = -2 mA VCE = -5 V; IC = -2 mA
[1]
Table 2. Symbol Per device hFE1/hFE2 VBE1-VBE2
Min 0.9 -
Typ 1 -
Max 2
Unit
[2]
mV
[1] [2]
The smaller of the two values is taken as the numerator. The smaller of the two values is subtracted from the larger value.
2. Pinning information
Table 3. Pin 1 2 3 4 5 6 Pinning Description emitter TR1 base TR1 collector TR2 emitter TR2 base TR2 collector TR1
1 2 3
001aab555 sym018
Simplified outline
6 5 4
Graphic symbol
6 5 4
TR2 TR1
1
2
3
3. Ordering information
Table 4. Ordering information Package Name BCM856BS BCM856BS/DG BCM856DS BCM856DS/DG SC-74 plastic surface-mounted package (TSOP6); 6 leads SOT457 SC-88 Description plastic surface-mounted package; 6 leads Version SOT363 Type number
BCM856BS_BCM856DS_1
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 -- 7 August 2008
2 of 14
NXP Semiconductors
BCM856BS; BCM856DS
PNP/PNP matched double transistors
4. Marking
Table 5. Marking codes Marking code[1] *BS PB* DS R9 Type number BCM856BS BCM856BS/DG BCM856DS BCM856DS/DG
[1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China
5. Limiting values
Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO IC ICM Ptot Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current peak collector current total power dissipation BCM856BS (SOT363) BCM856BS/DG (SOT363) BCM856DS (SOT457) BCM856DS/DG (SOT457) Per device Ptot total power dissipation BCM856BS (SOT363) BCM856BS/DG (SOT363) BCM856DS (SOT457) BCM856DS/DG (SOT457) Tj Tamb Tstg
[1]
Conditions open emitter open base open collector single pulse; tp 1 ms Tamb 25 C
[1]
Min -
Max -80 -65 -5 -100 -200
Unit V V V mA mA
Per transistor
-
200 250
mW mW
[1]
Tamb 25 C
[1]
-55 -65
300 380 150 +150 +150
mW mW C C C
[1]
junction temperature ambient temperature storage temperature
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
BCM856BS_BCM856DS_1
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 -- 7 August 2008
3 of 14
NXP Semiconductors
BCM856BS; BCM856DS
PNP/PNP matched double transistors
6. Thermal characteristics
Table 7. Thermal characteristics Conditions in free air
[1]
Symbol Parameter Per transistor Rth(j-a) thermal resistance from junction to ambient BCM856BS (SOT363) BCM856BS/DG (SOT363) BCM856DS (SOT457) BCM856DS/DG (SOT457) Per device Rth(j-a) thermal resistance from junction to ambient BCM856BS (SOT363) BCM856BS/DG (SOT363) BCM856DS (SOT457) BCM856DS/DG (SOT457)
[1]
Min
Typ
Max
Unit
-
-
625 500
K/W K/W
[1]
in free air
[1]
-
-
416 328
K/W K/W
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
Table 8. Characteristics Tamb = 25 C unless otherwise specified. Symbol ICBO Parameter collector-base cut-off current Conditions VCB = -30 V; IE = 0 A VCB = -30 V; IE = 0 A; Tj = 150 C IEBO hFE emitter-base cut-off current DC current gain VEB = -5 V; IC = 0 A VCE = -5 V; IC = -10 A VCE = -5 V; IC = -2 mA VCEsat collector-emitter saturation voltage IC = -10 mA; IB = -0.5 mA IC = -100 mA; IB = -5 mA VBEsat base-emitter saturation voltage IC = -10 mA; IB = -0.5 mA IC = -100 mA; IB = -5 mA
[1]
Min -
Typ -
Max -15 -5
Unit nA A
Per transistor
200 -
250 290 -50 -200 -760 -920
-100 450 -200 -400 -
nA
mV mV mV mV
[1]
BCM856BS_BCM856DS_1
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 -- 7 August 2008
4 of 14
NXP Semiconductors
BCM856BS; BCM856DS
PNP/PNP matched double transistors
Table 8. Characteristics ...continued Tamb = 25 C unless otherwise specified. Symbol VBE Parameter base-emitter voltage Conditions VCE = -5 V; IC = -2 mA VCE = -5 V; IC = -10 mA Cc collector capacitance VCB = -10 V; IE = ie = 0 A; f = 1 MHz VEB = -0.5 V; IC = ic = 0 A; f = 1 MHz VCE = -5 V; IC = -10 mA; f = 100 MHz VCE = -5 V; IC = -0.2 mA; RS = 2 k; f = 10 Hz to 15.7 kHz VCE = -5 V; IC = -0.2 mA; RS = 2 k; f = 1 kHz; B = 200 Hz Per device hFE1/hFE2 hFE matching VCE = -5 V; IC = -2 mA VCE = -5 V; IC = -2 mA
[3] [2]
Min -600 -
Typ -650 -
Max -700 -760 2.2
Unit mV mV pF
[2]
Ce
emitter capacitance
-
10
-
pF
fT
transition frequency
100
175
-
MHz
NF
noise figure
-
1.6
-
dB
-
3.1
-
dB
0.9 -
1 -
2 mV
VBE1-VBE2 VBE matching
[4]
[1] [2] [3] [4]
VBEsat decreases by about 1.7 mV/K with increasing temperature. VBE decreases by about 2 mV/K with increasing temperature. The smaller of the two values is taken as the numerator. The smaller of the two values is subtracted from the larger value.
BCM856BS_BCM856DS_1
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 -- 7 August 2008
5 of 14
NXP Semiconductors
BCM856BS; BCM856DS
PNP/PNP matched double transistors
-0.20 IC (A) -0.16
006aaa540
IB (mA) = -2.5 -2.25 -2.0 -1.75 -1.5 -1.25 -1.0 -0.75
600 hFE
(1)
006aaa541
400
(2)
-0.12
-0.08
-0.5 200
(3)
-0.04
-0.25
0 0
-2
-4
-6
-8 -10 VCE (V)
0 -10-2
-10-1
-1
-10
-102 -103 IC (mA)
Tamb = 25 C
VCE = -5 V (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = -55 C
Fig 1.
Collector current as a function of collector-emitter voltage; typical values
006aaa542
Fig 2.
DC current gain as a function of collector current; typical values
006aaa543
-1.3 VBEsat (V) -1.1
-10 VCEsat (V) -1
-0.9 -0.7
(1) (2) (3)
-0.5 -0.3
-10-1
(1) (2) (3)
-0.1 -10-1
-1
-10
-102 IC (mA)
-103
-10-2 -10-1
-1
-10
-102 IC (mA)
-103
IC/IB = 20 (1) Tamb = -55 C (2) Tamb = 25 C (3) Tamb = 100 C
IC/IB = 20 (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = -55 C
Fig 3.
Base-emitter saturation voltage as a function of collector current; typical values
Fig 4.
Collector-emitter saturation voltage as a function of collector current; typical values
BCM856BS_BCM856DS_1
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 -- 7 August 2008
6 of 14
NXP Semiconductors
BCM856BS; BCM856DS
PNP/PNP matched double transistors
-1 VBE (V) -0.8
006aaa544
103
006aaa545
fT (MHz)
102
-0.6
-0.4 -10-1
-1
-10
-102 IC (mA)
-103
10
-1
-10 IC (mA)
-102
VCE = -5 V; Tamb = 25 C
VCE = -5 V; Tamb = 25 C
Fig 5.
Base-emitter voltage as a function of collector current; typical values
8
006aaa546
Fig 6.
Transition frequency as a function of collector current; typical values
15
006aaa547
Cc (pF) 6
Ce (pF) 13
11 4 9
2 7
0 0
-2
-4
-6
-8 -10 VCB (V)
5 0
-2
-4 VEB (V)
-6
f = 1 MHz; Tamb = 25 C
f = 1 MHz; Tamb = 25 C
Fig 7.
Collector capacitance as a function of collector-base voltage; typical values
Fig 8.
Emitter capacitance as a function of emitter-base voltage; typical values
BCM856BS_BCM856DS_1
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 -- 7 August 2008
7 of 14
NXP Semiconductors
BCM856BS; BCM856DS
PNP/PNP matched double transistors
8. Application information
V-
VCC
R1
OUT1 IN1 l out
TR1 TR2
OUT2 IN2
TR1
TR2
V+
006aaa524 006aaa526
Fig 9.
Current mirror
Fig 10. Differential amplifier
9. Test information
9.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications.
10. Package outline
2.2 1.8 6 5 4 0.45 0.15 1.1 0.8 6
3.1 2.7 5 4 0.6 0.2
1.1 0.9
2.2 1.35 2.0 1.15
pin 1 index
3.0 2.5
1.7 1.3
pin 1 index
1 0.65 1.3 Dimensions in mm
2
3 0.3 0.2 0.25 0.10 06-03-16
1 0.95 1.9 Dimensions in mm
2
3 0.40 0.25 0.26 0.10 04-11-08
Fig 11. Package outline SOT363 (SC-88)
Fig 12. Package outline SOT457 (SC-74)
BCM856BS_BCM856DS_1
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 -- 7 August 2008
8 of 14
NXP Semiconductors
BCM856BS; BCM856DS
PNP/PNP matched double transistors
11. Packing information
Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number BCM856BS Package Description SOT363 4 mm pitch, 8 mm tape and reel; T1 4 mm pitch, 8 mm tape and reel; T2 BCM856BS/DG SOT363 BCM856DS SOT457 4 mm pitch, 8 mm tape and reel; T1 4 mm pitch, 8 mm tape and reel; T2 4 mm pitch, 8 mm tape and reel; T1 4 mm pitch, 8 mm tape and reel; T2 BCM856DS/DG SOT457 4 mm pitch, 8 mm tape and reel; T1 4 mm pitch, 8 mm tape and reel; T2
[1] [2] [3]
[2] [3] [2] [3] [2] [3] [2] [3]
Packing quantity 3000 -115 -125 -115 -125 -115 -125 -115 -125 10000 -135 -165 -135 -165 -135 -165 -135 -165
For further information and the availability of packing methods, see Section 15. T1: normal taping T2: reverse taping
12. Soldering
2.65
solder lands 2.35 1.5 0.6 0.5 (4x) (4x) 0.4 (2x) solder resist solder paste 0.5 (4x) 0.6 (4x) 1.8 0.6 (2x) occupied area Dimensions in mm
sot363_fr
Fig 13. Reflow soldering footprint SOT363 (SC-88)
BCM856BS_BCM856DS_1
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 -- 7 August 2008
9 of 14
NXP Semiconductors
BCM856BS; BCM856DS
PNP/PNP matched double transistors
1.5 solder lands 4.5 0.3 2.5 solder resist occupied area 1.5 Dimensions in mm preferred transport direction during soldering
1.3 2.45 5.3
1.3
sot363_fw
Fig 14. Wave soldering footprint SOT363 (SC-88)
3.45 1.95
0.95 3.3 2.825 0.95
0.45 0.55 (6x) (6x)
solder lands solder resist solder paste occupied area
0.7 (6x) 0.8 (6x) 2.4
Dimensions in mm
sot457_fr
Fig 15. Reflow soldering footprint SOT457 (SC-74)
BCM856BS_BCM856DS_1
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 -- 7 August 2008
10 of 14
NXP Semiconductors
BCM856BS; BCM856DS
PNP/PNP matched double transistors
5.3
1.5 (4x) solder lands 1.475 5.05 1.475 Dimensions in mm preferred transport direction during soldering 1.45 (6x) 2.85
sot457_fw
0.45 (2x)
solder resist occupied area
Fig 16. Wave soldering footprint SOT457 (SC-74)
BCM856BS_BCM856DS_1
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 -- 7 August 2008
11 of 14
NXP Semiconductors
BCM856BS; BCM856DS
PNP/PNP matched double transistors
13. Revision history
Table 10. Revision history Release date 20080807 Data sheet status Product data sheet Change notice Supersedes Document ID BCM856BS_BCM856DS_1
BCM856BS_BCM856DS_1
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 -- 7 August 2008
12 of 14
NXP Semiconductors
BCM856BS; BCM856DS
PNP/PNP matched double transistors
14. Legal information
14.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
14.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
14.3 Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental
14.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
15. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
BCM856BS_BCM856DS_1
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 -- 7 August 2008
13 of 14
NXP Semiconductors
BCM856BS; BCM856DS
PNP/PNP matched double transistors
16. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 10 11 12 13 14 14.1 14.2 14.3 14.4 15 16 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Application information. . . . . . . . . . . . . . . . . . . 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 8 Quality information . . . . . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Packing information. . . . . . . . . . . . . . . . . . . . . . 9 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information. . . . . . . . . . . . . . . . . . . . . 13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 7 August 2008 Document identifier: BCM856BS_BCM856DS_1

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